- Educational Qualifications: BE/BTech/ME/MTech in Electronics/Electrical Engineering.
- Experience: 4-10 Years
- Work Location: Bangalore
- Memory leaf cell layout development
- Migration of layout from one tech node to another
- Block and top-level integration
- Quality and timely delivery
- EM-IR, area intensive layouts, Quality checks (QC)
- Understanding of design rules for planer and FINFET CMOS technologies
- Drive multiple projects and provide necessary technical guidance to the engineers
- Experience in developing flash memories.
- Memory Layout experience in development of low power, high performance, high density SRAM memories for 5nm to 180nm technology nodes
- The candidate must have a Bachelor or Master in (EC/ME/VLSI)
- Expertise in Custom / Compiler Memory Layout
- 7nm or below FinFet technology preferred
- Understanding of DFM and DFY checks.
- Understanding of memory compiler architectures and sub blocks.
- Knowledge of scripting in PERL/Shell/TCL/Skill is a plus.
- Strong VLSI fundamentals of semiconductor devices and physics, electrical circuits, and IC fabrication. Experienced with Cadence Virtuoso/XL/Advance platform and features
- Clones, Modgen, Wire assistance, Chaining, Groups and Place and Route
- Experienced with Calibre/PVS/Assura/Hercules PV tools
- Good Verbal & written communication skills
Candidate should exhibit:
- Demonstrate excellent Self-motivation, communication, strong problem solving and teamwork skills.
- Set aggressive goals and meet/beat the commitments.
- Flexible enough to work in a dynamic environment and multitask seamlessly.
Ability to work independently and in a team.